发明名称 METHOD OF FORMING THROUGH ELECTRODE AND SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a through electrode, which simplifies a process and apparatus with no need of handling molten metals while maintaining a high temperature atmosphere, and which densely fills metals in through-holes, being compared with when using conductive paste. SOLUTION: A first non-through-hole 21 having an opening on the surface of an Si substrate 10, and a second non-through-hole 22 having a smaller opening than the first non-through-hole 21 in the bottom part thereof, are formed. A solid metal 50 is mounted on the bottom part thereof. The Si substrate 10 is placed under a decompressing atmosphere and heated up to in the vicinity of the softening point of the solid metal 50. While maintaining the heating condition so as to transit from the decompressing atmosphere to a pressurizing atmosphere, the second non-through-hole 22 is filled with the softened or melted metal 50. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232641(A) 申请公布日期 2010.10.14
申请号 JP20100035341 申请日期 2010.02.19
申请人 TDK CORP 发明人 SOGABE TOMOHIRO;DOMON TAKAAKI;INOKUCHI DAISUKE;TAKAGI MIKIO;ONCHI KENICHI
分类号 H01L21/3205;H01L23/52;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/3205
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