发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a double insulating film which seals up the semiconductor element to satisfactorily sustain the sealing performance of the semiconductor element even though damages occur at the corner of a second insulating film because of pelletizing or the like. SOLUTION: Because a corner of a first insulating film 105A of the semiconductor device 100 has been chamfered, damages less affect the corner of the first insulating film 105A even though they occur at the corner of a second insulating film 105B. This satisfactorily maintains the sealing performance of the semiconductor element 107. In addition, a simple structure and high productivity are achieved because chamfering the corner of the second insulating film 105B is not required. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232411(A) 申请公布日期 2010.10.14
申请号 JP20090078122 申请日期 2009.03.27
申请人 RENESAS ELECTRONICS CORP 发明人 FUKUDA HIROSHI
分类号 H01L21/301;H01L21/60 主分类号 H01L21/301
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