| 摘要 |
A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0<W<1) well layers and GaN barrier layers are alternately deposited.
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