发明名称 |
Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device |
摘要 |
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
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申请公布号 |
US2010258948(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
US20100823913 |
申请日期 |
2010.06.25 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
TANAKA NAOTAKA;KANEMITSU KENJI;KIKUCHI TAKAFUMI;AKAZAWA TAKASHI |
分类号 |
H01L23/538;H01L21/60;H01L21/768 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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