发明名称 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM
摘要 A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.
申请公布号 US2010260935(A1) 申请公布日期 2010.10.14
申请号 US20100753932 申请日期 2010.04.05
申请人 TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;HONMA MANABU;KIKUCHI HIROYUKI
分类号 C23C16/52;C23C16/00;C23C16/46 主分类号 C23C16/52
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