| 摘要 |
A trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure with guard ling, includes: a substrate including an epi layer region on the top thereof a plurality of source and body regions formed in the epi layer; a metal layer including a plurality of metal layer regions which are connected to respective source and body regions forming metal connections of the MOSFET; a plurality of metal contact plugs connected to respective metal layer regions; an insulating layer deposited on the epi layer formed underneath the metal layer with a plurality of metal contact holes therein for contacting respective source and body regions; and a guard ring wrapping around the trench gates with contact metal plug underneath the gate metal layer.
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