METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE

摘要

Provided is a method for producing a semiconductor substrate suitable for the formation of multiple different types of devices, such as an HBT and FET, on a single semiconductor substrate, wherein multiple semiconductor substrates are produced by repeating multiple steps that include a step for introducing a first impurity gas comprising as a structural element first impurity atoms, alone or in the form of a compound, into a reactor in which semiconductor crystals are grown. The method for producing a semiconductor substrate comprises steps that follow the step for introducing a first impurity gas and include a step for removing the resulting semiconductor substrate; a step for placement of a first semiconductor inside the reactor; a step for introducing into the reactor a second impurity gas comprising as a structural element second impurity atoms, alone or in the form of a compound, which have conductivity that is the opposite to that of the first impurity atoms inside the first semiconductor; a step for heating the first semiconductor in an atmosphere of the second impurity gas; and a step for growing crystals of a second semiconductor on the heated first semiconductor.