METHOD FOR MANUFACTURING FREE-STANDING III NITRIDE SEMICONDUCTOR SUBSTRATE, AND SUBSTRATE FOR GROWING III NITRIDE SEMICONDUCTOR LAYER

摘要

Provided is a method for manufacturing a free-standing III nitride semiconductor substrate, wherein a first III nitride semiconductor layer containing In is epitaxially grown at a first growing temperature on a base material, a second III nitride semiconductor layer is epitaxially grown at a second growing temperature higher than the first growing temperature on the first III nitride semiconductor layer which has been grown, the second III nitride semiconductor layer which has been grown is peeled from the base material, and a free-standing substrate composed of the second III nitride semiconductor is manufactured. Thus, the manufacturing method by which the free-standing III nitride semiconductor substrate can be manufactured at a low cost by the simple process and the substrate for growing the III nitride semiconductor layer are provided.