PHOTORESIST MATERIAL, PHOTORESIST FILM, ETCHING METHOD USING SAME, AND NOVEL AZO DYE COMPOUND

摘要

Disclosed is a photoresist material which contains a photoresist compound represented by general formula (1). (In general formula (1), Ap- represents a p-valent azo dye anion; p represents an integer within the range of 1-5; Xq+ represents a q-valent cation; q represents an integer within the range of 1-5; and k' represents the number of Xq+ required for neutralizing the electrical charge of each molecule as a whole. In this connection, the azo dye represented by general formula (1) contains no metal ions in each molecule. General formula (1): Ap-·(Xq+)k'