| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of achieving high voltage resistance. SOLUTION: The semiconductor integrated circuit includes an output node connected to a power source potential, and a first n-channel transistor, a second n-channel transistor, and a third n-channel transistor which are serially connected between the output node and a ground potential which is lower in potential than the power source potential. One end of the first n-channel transistor is connected to the ground potential, another end is connected to one end of the second n-channel transistor, its gate terminal is connected to an input node, another end of the second n-channel transistor is connected to the third n-channel transistor, and its gate terminal is connected to a first intermediate potential which resides between the power source potential and the ground potential, another end of the third n-channel transistor is connected to the output node, and its gate terminal is connected to the power source potential. COPYRIGHT: (C)2011,JPO&INPIT
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