发明名称 MAGNETIC ANISOTROPY MULTILAYER STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a magnetic anisotropy multilayer structure which controls an inversion mechanism to make inversion magnetic distribution in a bit pattern medium strict. SOLUTION: The magnetic anisotropy multilayer structure where an inversion mechanism is controlled to make inversion magnetic distribution in the bit pattern medium strict, is disclosed. A concept of an exchangeable spring is enlarged to a concept that is a more variable and finer structure. At least three layers having different anisotropies or anisotropy inclinations increase a writable gain so as to exceed a concept of a simple hard/soft double layer exchangeable spring of BPM. This structure includes a highly anisotropic center layer that is thin and very hard and functions as a threshold of propagation of a magnetic domain wall across the entire structure of the medium or as a pining layer. In addition thereto or instead thereof, a low anisotropic center layer that is thin and very soft and arranged between a soft surface layer that is typically used and the hard medium layer enables the magnetic domain wall to initially and rapidly propagate into the center of the medium structure. Use of a further highly anisotropic multilayer stack enables the various characteristics of the medium structure to be adjusted more independently, thereby allowing optimization. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010231880(A) 申请公布日期 2010.10.14
申请号 JP20100055957 申请日期 2010.03.12
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS BV 发明人 HAUET THOMAS;HELLWIG OLAV;SCHABES MANFRED ERNST
分类号 G11B5/66;G11B5/64;G11B5/65;G11B5/667 主分类号 G11B5/66
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