发明名称 |
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
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申请公布号 |
US2010258780(A1) |
申请公布日期 |
2010.10.14 |
申请号 |
US20100821414 |
申请日期 |
2010.06.23 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
LEE SEUNG-YUN;PARK YOUNG SAM;YOON SUNG MIN;CHOI KYU-JEONG;LEE NAM-YEAL;YU BYOUNG-GON |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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