ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
摘要
<p>An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400Å to 900Å. In a preferred embodiment, the thickness is 600Å.</p>
申请公布号
WO2010118090(A1)
申请公布日期
2010.10.14
申请号
WO2010US30177
申请日期
2010.04.07
申请人
EFFICIENT POWER CONVERSION CORPORATION;LIDOW, ALEXANDER;BEACH, ROBERT;NAKATA, ALANA;CAO, JIANJUN;ZHAO, GUANG, YUAN
