| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a start-up circuit of an internal power supply of a semiconductor memory, the start-up circuit promptly discharging residual potential when power is interrupted. <P>SOLUTION: A discharge circuit 40 is configured including NMOS transistors N4-N6 for discharge, an NMOS transistor N7 for potential compensation, and a DMOS transistor D2 for lowering the potential of wiring G by coupling capacitance. When a power supply voltage VCC is interrupted, the potential of the wiring G is lowered to a negative potential by the DMOS transistor D2 and the NMOS transistor N7, and the NMOS transistors N4-N6 are operated to lower and discharge the residual charges of the wiring D, E and F. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
