METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A RECESSED CHANNEL MOS TRANSISTOR

摘要

PURPOSE: A semiconductor device manufacturing method is provided to prevent a silicon residual, or silicon walls from remaining in the edge part of a gate trench which is contacted with an element isolation region. CONSTITUTION: A semiconductor device manufacturing method forms an element isolation region confining an activated region. A mask pattern has an opening crossing the activated region. The mask pattern(10) includes an oxide film having an insulation property. A back-up gate trench(15) is formed by etching an exposed activated region with the opening. Semiconductor walls remains in the side walls of the back-up gate trench, which face each other with being contacted with the element isolation region.