| 摘要 |
<P>PROBLEM TO BE SOLVED: To propose a solid-state imaging element for preventing the light entering through a gap between photoelectric conversion elements and reflected by a wiring layer from being received by the photoelectric conversion elements, and not causing such problems as noise and color mixture in a backside-illuminated type solid-state imaging element, and to propose a method of manufacturing the same. <P>SOLUTION: A solid-state imaging element includes a silicon layer in the shape of a thin-film plate, a wiring layer provided on one surface side of the silicon layer, a plurality of photoelectric conversion elements formed with a light-receiving part facing a surface on the opposite side of the wiring layer of the silicon layer, a high-refractive-index transparent layer provided on the surface of the light-receiving part of the photoelectric conversion element in the same shape as the light-receiving part, a planarized transparent layer covering the high-refractive-index transparent layer to form a planar surface, and a color filter provided corresponding to each of the light-receiving parts of the photoelectric conversion elements on the upper surface of the planarized transparent layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
