| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering technique which can greatly reduce the period of time for switching the type of the film, and effectively and stably secure the film of high quality, when forming films including a plurality of types only by switching ON/OFF of a reactive gas with a small number of targets. <P>SOLUTION: This sputtering method includes: a first sputtering step of sputtering a first target material to form a film on a substrate; a second sputtering step of sputtering a second target material that is different from the first target material to form a film on the substrate; and a pre-sputtering step of sputtering the first and the second target materials so that each film formation rate changes while shielding the substrate from the plurality of the target materials, after the first sputtering step and before the second sputtering step. <P>COPYRIGHT: (C)2011,JPO&INPIT |
