摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having superior durable reliability. SOLUTION: The semiconductor device 1 includes a semiconductor element 7 bonded on a metal plate 3a of an insulating substrate 5 via a solder layer 6, and a heat-radiating metal plate 9 bonded on a metal plate 4 via a solder layer 8. The metal plate 3 has a rectangular shape containing two pairs of sides 3a and 3b parallel to each other and angle parts 3c connecting the sides 3a and 3b. The metal plate 4 has a rectangular shape containing two pairs of sides 4a and 4b parallel to each other and angle parts 4c connecting the sides 4a and 4b. The metal plate 4 has an area larger than the metal plate 3. The metal plates 3 and 4 are so laminated that each of sides 3a and 4a, and each of sides 3b and 4b become parallel to each other via the insulating substrate 5, and at least a part of the angle part 3c overlaps with the angle part 4c. The insulating substrate 5 is formed of one kind of ceramics selected from a group of an Si<SB>3</SB>N<SB>4</SB>, an AlN and an Al<SB>2</SB>O<SB>3</SB>, and the metal plates 3 and 4 is formed of a Cu or an Al. COPYRIGHT: (C)2011,JPO&INPIT
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