| 摘要 |
PROBLEM TO BE SOLVED: To give stable characteristics to all memory cells included in a memory cell block, in a semiconductor device comprising a memory cell region including a plurality of memory cells. SOLUTION: In a plurality of layers of a semiconductor device, a function pattern 100 that is a pattern necessary for functions of the semiconductor device and a dummy patter 102 not necessary for functions are formed. Between a silicon substrate 80 and the function pattern 100 or between the function patterns, a plug 104 for forming a desired wire configuration is formed. On the other hand, between the dummy patters 102 in each layer, a dummy plug 106 for bringing the dummy pattern 102 into conduction with a terminal at a predetermined potential is formed. COPYRIGHT: (C)2011,JPO&INPIT
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