| 摘要 |
PROBLEM TO BE SOLVED: To make a high performance semiconductor element in a multilayered or three-dimensional structure by growing a monocrystalline semiconductor layer at a desired position on an amorphous insulation layer, and obtain a highly functional semiconductor integrated system. SOLUTION: A method of crystallizing a semiconductor thin-film includes steps of depositing an amorphous semiconductor thin-film on the insulation layer, bringing the monocrystalline semiconductor layer into contact with part of the former thin-film, and single-crystallizing the amorphous semiconductor thin-film with crystallinity of the monocrystalline semiconductor layer reflected by heat treatment. COPYRIGHT: (C)2011,JPO&INPIT
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