| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film device which has reduced leakage current and has small variations in leak current among individuals. SOLUTION: The thin film device 100 includes a base electrode 2 made of metal, a first dielectric layer 4, a first inner electrode 10, a second dielectric layer 6, a second inner electrode 12, and a third dielectric layer 8. The thin film device 100 satisfies T1>Tmin, wherein T1 denotes the thickness of the lowermost first dielectric layer 4 in contact with the base electrode 2 in the plurality of dielectric layers, and Tmin denotes the thickness of a thinnest dielectric layer in the plurality of dielectric layers 6 and 8 excluding the first dielectric layer 4. The first dielectric layer 4 is made thicker than the thinnest dielectric layer in the other dielectric layers to make large the distance between a metal part protruding from a metal surface of the base electrode 2 and the inner electrode mounted on the lowermost dielectric layer originating from surface roughness of the metal surface of the base electrode 2, thereby reducing the leakage current. COPYRIGHT: (C)2011,JPO&INPIT
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