发明名称 SUBSTRATE HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate heat treatment apparatus facilitating the connection of a suction pipe with a heat treatment plate, maintaining heat uniformity within the surface of the heat treatment plate, and improving maintainability such as the inspection and exchange of the heat treatment plate. SOLUTION: This substrate heat treatment apparatus is equipped with: a heat plate 70 where a semiconductor wafer W is placed and heat-treated; a plurality of suction openings 76 formed on the wafer mounting surface of the heat plate 70 to suck the wafer; and a suction pipe 78 that connects each suction opening 76 and a suction means. At one end of the suction pipe 78, a connecting member 77 made of thermally insulated and flexible synthetic rubber is equipped. Then, the connecting member 77 is closely attached to the lower surface of the heat plate 70, and the suction opening 76 and the suction pipe 78 are connected airtightly. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010232415(A) 申请公布日期 2010.10.14
申请号 JP20090078160 申请日期 2009.03.27
申请人 TOKYO ELECTRON LTD 发明人 TAKAGI YASUHIRO;KAWAMICHI TATSUYA;FUKUDA YOSHITERU
分类号 H01L21/027 主分类号 H01L21/027
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