VERTICAL TYPE NON VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A vertical type nonvolatile memory device and a manufacturing method thereof are provided to enlarge a program and erase window with reducing the complexity of a conventional process. CONSTITUTION: A vertical type nonvolatile memory device includes a substrate(100), a first selection transistor layer(121), an electrode layer(141), and a second selection transistor layer(151). The first selection transistor layer is formed within the substrate. The electrode layer is repetitively formed by injecting an impurity ion by being separated from s separation layer formed by injecting an oxygen ion on the first selection transistor layer. The second selection transistor layer is formed by being separated from the separation layer on the electrode layer.