SEMICONDUCTOR NANOWIRE WITH BUILT-IN STRESS

摘要

PURPOSE: A semiconductor nano wire with built-in stress is provided to improve an on-current and charge carrier mobility of a semiconductor nano wire transistor. CONSTITUTION: A semiconductor nano wire with built-in stress includes a semiconductor nano wire(32C) and a gate dielectric. The semiconductor nano wire is contacted with a first semiconductor pad(32A) and a second semiconductor pad(32B) and receives stress in a longitudinal direction. The gate dielectric surrounds the central part of the semiconductor nano wire to receive the stress. A dielectric material layer includes a first semiconductor pad and a second semiconductor pad and is stress-free.