| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent an SAC fail by blocking a short between a gate and a landing plug. CONSTITUTION: A semiconductor device includes a semiconductor substrate(200), a device isolation layer, a gate, a plug, and an insulation layer(212). First grooves are formed on an active area of the semiconductor substrate. A device isolation layer is formed in the semiconductor substrate and has second grooves to expose the sides of the active area with the first grooves. A plurality of gates are formed on the first and second grooves. The plug is formed on the semiconductor substrate between gates. The device isolation layer is formed between the gate formed on the second groove of the device isolation layer and the plug formed on the device isolation layer.</p> |
