| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a high quality group III nitride crystal having a practical large size and large area can be manufactured at a lower cost compared with the conventional ones, and to provide the group III nitride crystal. <P>SOLUTION: In the method for growing the group III nitride crystal, a gas-liquid interface is formed by bringing a melt 27 containing at least a group III metal into contact with an atmospheric gas containing a nitrogen raw material gas, and a flux and nitrogen is dissolved into the melt 27 from the atmospheric gas side of the gas-liquid interface, and thereby the crystal of the group III nitride 29 is grown in the melt 27 in which the group III metal, the flux and nitrogen are dissolved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
