| 摘要 |
A sensor element of a gas sensor for determining gas components in gas mixtures is provided, which includes a field-effect transistor having a source electrode, a drain electrode, and a gate electrode. The gate electrode includes a gate metallization, which is in contact with an insulation layer or a semiconductor substrate of the field-effect transistor via a boundary layer, the boundary layer being formed by modifying the surface of the insulation layer or the semiconductor substrate using metal alkoxides, metal amides, metal halogenides and/or metal alkyls. Furthermore, a method for producing said sensor element is provided. |
