发明名称 |
METHOD FOR PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR, METHOD FOR PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR PHOSPHOR, AND HEXAGONAL GROUP II-VI COMPOUND SEMICONDUCTOR |
摘要 |
<p>An object of the invention is to provide a method for the stable production of a high-purity Group II-VI compound semiconductor on an industrial scale, and also a hexagonal crystal of Group II-VI compound semiconductor in which a metal can be doped easily. Another object of the invention is to provide a method of producing a Group II-VI compound semiconductor phosphor. The objects are achieved by a method of producing a Group II-VI compound semiconductor comprising generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor; a method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma; and a hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.</p> |
申请公布号 |
KR20100110807(A) |
申请公布日期 |
2010.10.13 |
申请号 |
KR20107014640 |
申请日期 |
2009.02.05 |
申请人 |
NATIONAL UNIVERSITY CORPORATION KUMAMOTO UNIVERSITY;KURARAY CO., LTD. |
发明人 |
MASHIMO TSUTOMU;EMIL OMURZAK UULU;OKAMOTO MAKOTO;IWASAKI HIDEHARU |
分类号 |
C01G9/08;C09K11/56;C09K11/58;C09K11/77 |
主分类号 |
C01G9/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|