| 摘要 |
<p>A vapor phase growth method for growing a semiconductor single crystal thin film on a front surface of a semiconductor single crystal substrate ( 1 ) while introducing gas into a reaction chamber ( 11 ), has a step of performing heating output power control in a gas introduction region (R 1 ) according to a temperature detected in a region other than the gas introduction region (R 1 ) in the reaction chamber ( 11 ).</p> |
