| 摘要 |
<p>PURPOSE: A phase change RAM device and a manufacturing method thereof are provided to prevent remaining metal materials in patterning a top electrode from being diffused to a phase change layer. CONSTITUTION: A phase change RAM device includes a laminate pattern, a metal oxide layer, and a capping layer. A laminate pattern is comprised of a phase change layer(310), a top electrode(320), and an anti-reflection layer(330). The metal oxide layer is formed on the laminate pattern and prevents the diffusion of metal to the phase change layer. The capping layer is formed on the surface of the metal oxide layer.</p> |
