| 摘要 |
<p>There is provided a non-volatile semiconductor device having a memory cell in which a threshold value voltage changes in accordance with the application of the writing pulse having a predetermined width and voltage with respect to word lines and bit lines and data depending upon the threshold value voltage is written, wherein writing failure is generated in the first time data writing operation, and a writing condition is set for suppressing the writing condition is set which is capable of suppressing the writing failure rate than the case of the first time writing operation when the writing operation is re-executed.</p> |
