发明名称 Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
摘要 An electrostatic chuck in a reactor chamber has a cathode electrode insulated from ground, a chucking electrode insulated from the cathode electrode and a dielectric layer overlying the chucking electrode that provides a workpiece support surface. A D.C. chucking voltage supply is coupled to the chucking electrode. An RF power generator is coupled to the cathode electrode. A voltage sensing apparatus is coupled to the chucking electrode and to the cathode electrode to monitor the voltage difference between them during discharge after removal of RF and DC power at the conclusion of processing. The reactor includes a controller programmed to raise the lift pins during electrode discharge as soon as the voltage sensing apparatus detects equal voltages simultaneously on the chucking and cathode electrodes.
申请公布号 US7813103(B2) 申请公布日期 2010.10.12
申请号 US20070974502 申请日期 2007.10.11
申请人 APPLIED MATERIALS, INC. 发明人 SHANNON STEVEN C.;CHAFIN MICHAEL G.;GRIMARD DENNIS S.
分类号 H02N13/00;H01T23/00 主分类号 H02N13/00
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