发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
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申请公布号 |
US7813205(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20080212066 |
申请日期 |
2008.09.17 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
SAKO ATSUMASA |
分类号 |
G11C7/00;G11C7/04;G11C11/34 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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