发明名称 Plasma processing system with locally-efficient inductive plasma coupling
摘要 A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.
申请公布号 US7810449(B2) 申请公布日期 2010.10.12
申请号 US20070860044 申请日期 2007.09.24
申请人 TOKYO ELECTRON LIMITED 发明人 BRCKA JOZEF;ROBISON RODNEY LEE
分类号 C23C16/00;B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01J37/32;H01L21/306;H05B31/26 主分类号 C23C16/00
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