发明名称 |
Process for producing silicon carbide crystals having increased minority carrier lifetimes |
摘要 |
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
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申请公布号 |
US7811943(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20050052679 |
申请日期 |
2005.02.07 |
申请人 |
CREE, INC. |
发明人 |
CARTER, JR. CALVIN H.;JENNY JASON R.;MALTA DAVID P.;HOBGOOD HUDSON M.;TSVETKOV VALERI F.;DAS MRINAL K. |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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