发明名称 |
Non-volatile memory device and a method of programming a multi level cell in the same |
摘要 |
A method of programming a multi level cell in a non-volatile memory device includes providing different data to main cells and indicator cells. The main cells and indicator cells have different threshold voltages in accordance with the data. A program operation is performed on a main cell and an indicator cell. A first verifying operation is performed based on a first verifying voltage of the main cell and the indicator cell. The program operation and the first verifying operation are performed repeatedly until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage. A second verifying operation is performed on the main cell based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.
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申请公布号 |
US7813188(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20080019929 |
申请日期 |
2008.01.25 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
WON SAM-KYU;CHA JAE-WON;BAEK KWANG-HO |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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