发明名称 |
Memory array structure with strapping cells |
摘要 |
A memory array with a row of strapping cells is provided. In accordance with embodiments of the present invention, strapping cells are positioned between two rows of a memory array. The strapping cells provide a P+ strap between N+ active areas of two memory cells in a column and provide an N+ strap between P+ active areas of two memory cells in a column of the memory array. The strapping cells provide an insulating structure between the two rows of the memory array and create a more uniform operation of the memory cells regardless of the positions of the memory cells within the memory array. In an embodiment, a dummy N-well may be formed along the outer edge of the memory array in a direction perpendicular to the row of strapping cells. Furthermore, transistors may be formed in the strapping cells to provide additional insulation between the strapped memory cells.
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申请公布号 |
US7812407(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20100697490 |
申请日期 |
2010.02.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAW JHON-JHY |
分类号 |
H01L27/108;H01L27/11;H01L27/112 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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