发明名称 Method for processing a base that includes connecting a first base to a second base with an insulating film
摘要 The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
申请公布号 US7811835(B2) 申请公布日期 2010.10.12
申请号 US20090403283 申请日期 2009.03.12
申请人 FUJITSU LIMITED 发明人 MIZUKOSHI MASATAKA;IMAIZUMI NOBUHIRO;ISHIZUKI YOSHIKATSU
分类号 H01L21/58 主分类号 H01L21/58
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