发明名称 Light emitting devices with an electrically active top reflector contact
摘要 According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.
申请公布号 US7812421(B2) 申请公布日期 2010.10.12
申请号 US20070962861 申请日期 2007.12.21
申请人 PALO ALSO RESEARCH CENTER INCORPORATED 发明人 CHUA CHRISTOPHER L.;TEEPE MARK R.;KNOLLENBERG CLIFFORD;YANG ZHIHONG
分类号 H01L29/78;H01L33/32;H01L33/38;H01L33/40 主分类号 H01L29/78
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