发明名称 |
Method and edge region structure using co-implanted particles for layer transfer processes |
摘要 |
A method for fabricating a silicon on substrate structure having smooth edge regions. The method includes providing a silicon donor substrate having a surface region and a backside region. A substrate thickness is provided between the surface region and the backside region. The method includes co-implanting a plurality of first particles through the surface region into a vicinity of a cleave region and a plurality of second particles through the surface region into the vicinity of the cleave region. The cleave region defines a thickness of material to be removed between the cleave region and the surface region. The surface region of the silicon donor substrate is joint to a handle substrate to form a coupled substrate structure. The coupled substrate structure is then processed using a thermal treatment process and placed into a cleaving chamber. A cleaving action is initiated at an edge region of the coupled substrate structure to begin to detach the thickness of material at the edge region toward a center region of the thickness of material. The thickness of material is freed from a remaining portion of the coupled substrate structure. In a specific embodiment, the method provides an edge region having an edge profile that is substantially free from particles that can lead to breakage and the like.
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申请公布号 |
US7811901(B1) |
申请公布日期 |
2010.10.12 |
申请号 |
US20080315369 |
申请日期 |
2008.12.01 |
申请人 |
SILICON GENESIS CORPORATION |
发明人 |
ONG PHILIP JAMES;KIRK HARRY;SULLIVAN JAMES ANDREW |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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