发明名称 |
MOSFET devices and methods for making them |
摘要 |
A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.
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申请公布号 |
US7812413(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20080233286 |
申请日期 |
2008.09.18 |
申请人 |
IMEC;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG SHIH-HSUN;RAGNARSSON LARS-AKE |
分类号 |
H01L29/78;H01L21/3205;H01L21/336;H01L21/4763;H01L21/8238;H01L29/49;H01L29/51 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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