发明名称 Magneto resistance element and magnetic random access memory
摘要 A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
申请公布号 US7813164(B2) 申请公布日期 2010.10.12
申请号 US20050661205 申请日期 2005.08.26
申请人 NEC CORPORATION 发明人 SUGIBAYASHI TADAHIKO;HONDA TAKESHI;SAKIMURA NOBORU
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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