Semiconductor light emitting device and method for manufacturing the same

摘要

The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 μm and a bottom base diameter of from 0.05 to 2.0 μm; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 μm and a base diameter of from 0.05 to 2.0 μm. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μm and a surface density of 2×106 to 2×1010 cm−2, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.