发明名称 |
Image sensor and method for manufacturing the same |
摘要 |
An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.
|
申请公布号 |
US7812350(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20070842590 |
申请日期 |
2007.08.21 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
KIM TAE GYU |
分类号 |
H01L29/04;H01L27/146;H04N5/335;H04N5/369;H04N5/374;H04N5/3745 |
主分类号 |
H01L29/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|