发明名称 Image sensor and method for manufacturing the same
摘要 An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.
申请公布号 US7812350(B2) 申请公布日期 2010.10.12
申请号 US20070842590 申请日期 2007.08.21
申请人 DONGBU HITEK CO., LTD. 发明人 KIM TAE GYU
分类号 H01L29/04;H01L27/146;H04N5/335;H04N5/369;H04N5/374;H04N5/3745 主分类号 H01L29/04
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