摘要 |
The present invention provides a method and system for improving reticle enhancement calculations during manufacture of an integrated circuit (IC). The reticle enhancement calculations are improved by incorporating post-planarization topography estimates. A planarization process of a wafer layer is simulated to estimate the post-planarization topography. RET calculations, such as sub-resolution assist feature insertion, optical proximity corrections and phase shifting are then performed based on the post-planarization topography of the wafer layer.
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