发明名称 Methods of manufacturing reference sample substrates for analyzing metal contamination levels
摘要 A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.
申请公布号 US7811836(B2) 申请公布日期 2010.10.12
申请号 US20060646142 申请日期 2006.12.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAE-SEOK;JUN PIL-KWON;PARK SUN-HEE;KIM MI-AE
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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