发明名称 |
Phase change memory device and method of forming the same |
摘要 |
A phase change memory device includes a current restrictive element interposed between an electrically conductive element and a phase change material. The current restrictive element includes a plurality of overlapping film patterns, each of which having a respective first portion proximal to the conductive element and a second portion proximal to the phase change material. The second portions are configured and dimensioned to have higher resistance than the first portions.
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申请公布号 |
US7812332(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20070769532 |
申请日期 |
2007.06.27 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
OH GYU-HWAN;PARK IN-SUN;LIM HYUN-SEOK;LEE KI-JONG;LIM NAK-HYUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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