发明名称 |
Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics |
摘要 |
Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.
|
申请公布号 |
US7811926(B2) |
申请公布日期 |
2010.10.12 |
申请号 |
US20080198602 |
申请日期 |
2008.08.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FULLER NICHOLAS C. M.;GATES STEPHEN MCCONNELL;DALTON TIMOTHY J. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|