METHOD OF DEPOSITING SILICON OXIDE FILM BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION AT LOW TEMPERATURE

摘要

PURPOSE: A silicon dioxide film deposition method using plasma enhanced atomic layer deposition at low temperature is provided to prevent the deformation of and damage to an organic film of a substrate in the lamination structure formation on the substrate. CONSTITUTION: A silicon dioxide film deposition method using plasma enhanced atomic layer deposition at low temperature is as follows. A substrate with a resist pattern or an etched line is offered to a reactor. The temperature of a susceptor, in which a substrate is located, is controlled at 50°C. Silicon containing precursor and oxygen-supplying reactant are put into in the PEALD reactor for a fixed time at the deposition temperature less than 50°C. An oxidized silicon embryo layer is formed on the resist pattern or the etched line.