ATTENUATED PHASE SHIFT PHOTOMASKS HAVING A RIM AREA AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An attenuated phase shift photomask for controlling the transmissivity, and a manufacturing method thereof are provided to improve the Yield and the productivity of a semiconductor chip by the excellent uniformity of optical patterns. CONSTITUTION: A manufacturing method of an attenuated phase shift photomask for controlling the transmissivity comprises the following steps: forming a phase shift material layer(120) on a photomask board(110); forming a light shielding layer(140) on the phase shift material layer; forming a first resist pattern selectively exposing a pattern domain(130) on the light shielding layer; etching the light shielding layer exposed on the pattern domain using the first resist pattern as an etching mask, to form a first light shielding pattern layer partially exposing the phase shift material layer; removing the first resist pattern; forming a second resist pattern; etching the phase shift material layer to partially expose the photomask board; and removing the second resist pattern.